Advances in Chemical Mechanical Planarization (CMP)

<p>Part One - CMP of dielectric and metal films</p> <p>1. Chemical and physical mechanisms of dielectric chemical mechanical polishing (CMP)</p> <p>2. Copper chemical mechanical planarization (Cu CMP) challenges in 22 nm back-end-of-line (BEOL) and beyond</p> <p>3. Electrochemical techniques and their applications for CMP of metal films</p> <p>4. Ultra-low-k materials and chemical mechanical planarization (CMP)</p> <p>5. CMP processing of high mobility channel materials - alternatives to Sis</p> <p>6. Multiscale modeling of chemical mechanical planarization (CMP)</p> <p>7. Polishing of SiC films</p> <p>8. Chemical and physical mechanisms of CMP of gallium nitride</p> <p>9. Abrasive-free and ultra-low abrasive chemical mechanical polishing (CMP) processes</p> <p>10. Transient copper removal rate phenomena with implications for polishing mechanisms</p> <p>11. Environmental aspects of planarization processes </p> <p>Part Two - Consumables and process control for improved CMP</p> <p>12. Preparation and characterization of slurry for CMP</p> <p>13. Chemical metrology methods for CMP quality</p> <p>14. Diamond disc pad conditioning in chemical mechanical polishing</p> <p>15. Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy</p> <p>16. Chemical mechanical polishing (CMP) removal rate uniformity and role of carrier parameters</p> <p>17. Approaches to defect characterization, mitigation and reduction</p> <p>18. Challenges and solutions for post-CMP cleaning at device and interconnect levels</p> <p>19. Applications of chemical mechanical planarization (CMP) to More than Moore devices</p> <p>20. CMP for phase change materials</p> <p>21. CMP pads and their performance</p> <p>22. Latest developments in the understanding of PVA brush related issues during post CMP (pCMP) cleaning</p>